Jun 19, 2018   SOURCE: PR NewsWire

GaN Systems' GS61004B GaN HEMT Complete Teardown Report 2018 with Comparison of Standard 100V Si MOSFETs and Low-Voltage GaN on Si HEMT

DUBLIN, June 19, 2018 /PRNewswire/ --

The "GaN Systems GS61004B GaN HEMT Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering.

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There are only two main players in low-voltage GaN: EPC and GaN Systems, a fact mainly due to the complexity of using a standard package with low losses. GaN Systems wants to compete with EPC, the market leader, in the low-voltage HEMT market. System Plus Consulting unveils the GS61004B from GaN Systems, the latest device driving 100V and optimized for AC-DC converters and high-frequency, high-efficiency power conversion.

The GS61004B from GaN Systems is a GaN-on-silicon HEMT transistor packaged in the GaNpx embedded die package. This embedded die package is unique to the market in that it allows for high current capability. The GS61004B has a die size of around 4 mm2 and carries up to 45A, which means more than 10A/mm2, almost 3x higher than the competition.

The GS61004B is packaged in an innovative embedded die package developed by AT&S (ECP process). This package has no wire bonding, which reduces inductance, and its design increases heat management. The die's new position in the package facilitates enhanced thermal dissipation, and a simplification of the process reduces manufacturing time and cost.

Based on a complete teardown analysis, this report also provides an estimated production cost for the epitaxy and the package. Moreover, this report compares standard 100V Si MOSFETs and low-voltage GaN on Si HEMT.

Key Topics Covered:

1. Overview / Introduction

    --  Executive Summary
    --  Reverse Costing Methodology

2. Company Profile

    --  GaN Systems
    --  Products

3. Physical Analysis

    --  Summary of the Physical Analysis
    --  Package Analysis
        --  Package opening
        --  Package cross-section

    --  HEMT Die
        --  HEMT die view and dimensions
        --  HEMT die process
        --  HEMT die cross-section
        --  HEMT die process characteristics

4. Transistor Manufacturing Process

    --  HEMT Die Front-End Process
    --  HEMT Die Fabrication Unit
    --  Final Test and Packaging Fabrication Unit

5. Cost Analysis

    --  Cost Analysis - Summary
    --  Yields Explanation and Hypotheses
    --  HEMT Die
        --  HEMT front-end cost
        --  HEMT die probe test, thinning and dicing
        --  HEMT wafer cost
        --  HEMT die cost

    --  Complete Device
        --  Packaging cost
        --  Final test cost

6. Price Analysis

    --  Estimated Sales Price

7. Comparison

    --  Comparison of GaN Systems' Devices
    --  Comparison of GaN Systems and EPC 100V HEMT
    --  Comparison between 100V GaN-on-Si and Si MOSFET

Companies Mentioned 

    --  EPC
    --  GaN Systems
    --  Panasocnic
    --  TI

    --  Transphorm

For more information about this report visit https://www.researchandmarkets.com/research/t7mrt9/gan_systems?w=5

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SOURCE Research and Markets