HexaTech Launches Optimized Nitrogen Face Aluminum Nitride Substrate Product

Product Targets Development of Power/RF Device Technologies

MORRISVILLE, N.C., July 8, 2025 /PRNewswire/ -- HexaTech, Inc. announced today the production release of an optimized nitrogen face (N-polar) terminated aluminum nitride (AlN) substrate process. The commercial availability of a high-quality N-polar surface is intended to directly support the rapidly growing interest in N-polar device development, due to the expected performance gains versus more typical aluminum (Al-polar) surface epitaxial growth. This new N-polar process can be applied to any of HexaTech's standard 2-inch diameter part numbers.

"N-polar electronic device structures, such as high electron mobility transistors (HEMTs), grown on N-polar AlN substrates, simultaneously benefit from the material properties of the underlying bulk AlN substrate, such as high electrical resistivity and thermal conductivity, as well as the advantages of N-polar heterostructures, which may improve the maximum power gain cut-off frequency," noted HexaTech senior scientist Dr. Rafael Dalmau.

Gregory Mills, HexaTech VP of Business Development added, "This N-polar process technology, which has been in development for well over a year, is directly scalable in diameter and volume, and dovetails well alongside HexaTech's previously announced 100 mm expansion program, which is supported in part by the U.S. Department of Defense's DARPA UWBGS program."

As the world's leading commercial supplier of single crystal physical vapor transport (PVT)-grown AlN substrates, HexaTech is once again driving cutting-edge product capabilities to exceed the needs of its customers.

All of HexaTech's 2-inch diameter products are available now with standard lead times. For more information on HexaTech's technology and products, please visit www.hexatechinc.com, or contact HexaTech at sales@hexatechinc.com.

About HexaTech

HexaTech, a wholly owned subsidiary of Stanley Electric, Tokyo, Japan, is an industry-leading manufacturer of single crystal aluminum nitride (AlN) substrates. This substrate material is enabling long life UV-C light emitting diodes (LEDs) for disinfection applications, deep UV lasers for biological threat detection, high voltage switching devices for efficient power conversion, and RF components for satellite communications.

Founded in 2001, the HexaTech team has successfully solved complex material science and engineering challenges to commercialize high quality bulk AlN for volume production. For additional company and product information, please visit us at www.hexatechinc.com.

About Stanley Electric

Stanley Electric is a global company headquartered in Tokyo, Japan, that manufactures automotive equipment and electronic components with cutting-edge optical technologies. With manufacturing at its core, Stanley Electric invests in its group companies around the world to produce automotive lamps, LEDs (ultraviolet, visible, infrared) and other electronics. The company is contributing broadly to society by exploring the infinite possibilities of light and bringing its value to humankind. For more information about Stanley Electric, please visit www.stanley.co.jp/e/.

Contact: Greg Mills
HexaTech, Inc.
+1 919 415 1495
gmills@hexatechinc.com

View original content to download multimedia:https://www.prnewswire.com/news-releases/hexatech-launches-optimized-nitrogen-face-aluminum-nitride-substrate-product-302498258.html

SOURCE HexaTech, Inc.